WMSC008H12B1P
WMSC008H12B1P is N-Channel Silicon Carbide MOSFET manufactured by WeEn.
description
We En PACK-B1 module with We En 1200V Gen2 Si C MOSFET and Press Fit pin type. Intergrated with NTC temperature sensor. h Ro HS alogen-Free
2. Features and benefits
- Half bridge topology
- Press Fit pins technology
- Low RDSon
- Low Switching Losses
- Low Qg and Crss
- Low Inductive Design
3. Applications
- Power inverters
- AC-DC converters
- DC-DC converters
- Active power factor correctors
- Motor drivers
4. Quick reference data
Table 1. Quick reference data Symbol Parameter
Conditions
Notes
Values
Absolute maximum rating
VDS drain-source voltage
Tj = 25 °C
ID drain current
VGS = 18 V; Th = 25 °C
Ptot total power dissipation Th = 25 °C
Tj junction temperature
-40 to 150
Symbol Parameter
Static characteristics
RDS(on) drain-source on-state resistance
Conditions
VGS = 15 V; ID = 150 A; Tj = 25 °C VGS = 18 V; ID = 150 A; Tj = 25 °C
Notes Min Typ Max
- 8.0
-...
