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WNSC2D201200 - Silicon Carbide Diode

General Description

Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency switched-mode power supplies.

2.

Key Features

  • Lead-Free.
  • Highly stable switching performance.
  • High forward surge capability IFSM.
  • Extremely fast reverse recovery time.
  • Superior in efficiency to Silicon Diode alternatives.
  • Reduced losses in associated MOSFET.
  • Reduced EMI.
  • Reduced cooling requirements.
  • RoHS compliant.
  • High junction operating temperature capability (Tj(max) = 175 °C) 3.

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Datasheet Details

Part number WNSC2D201200
Manufacturer WeEn
File Size 460.49 KB
Description Silicon Carbide Diode
Datasheet download datasheet WNSC2D201200 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNSC2D201200 Silicon Carbide Diode Rev.01 - 21 June 2022 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency switched-mode power supplies. RoHS halogen-Free 2. Features and benefits Lead-Free • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant • High junction operating temperature capability (Tj(max) = 175 °C) 3. Applications • Power factor correction • Telecom / Server SMPS • UPS • PV inverter • PC Silverbox • LED / OLED TV • Motor Drives 4. Quick reference data Table 1.