• Part: WNSC2D201200W-B
  • Description: Silicon Carbide Diode
  • Category: Diode
  • Manufacturer: WeEn
  • Size: 591.52 KB
Download WNSC2D201200W-B Datasheet PDF
WeEn
WNSC2D201200W-B
description Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency switched-mode power supplies. h Ro HS alogen-Free 2. Features and benefits Lead-Free - Highly stable switching performance - High forward surge capability IFSM - Extremely fast reverse recovery time - Superior in efficiency to Silicon Diode alternatives - Reduced losses in associated MOSFET - Reduced EMI - Reduced cooling requirements - Ro HS pliant - High junction operating temperature capability (Tj(max) = 175 °C) 3. Applications - Power factor correction - Tele / Server SMPS - UPS - PV inverter - PC Silverbox - LED / OLED TV - Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 112 °C; Fig. 1; Fig. 2; Fig. 3 Tj junction temperature Symbol Parameter Conditions Static characteristics VF forward...