WNSC2D201200W-B Overview
Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency switched-mode power supplies.
WNSC2D201200W-B Key Features
- Highly stable switching performance
- High forward surge capability IFSM
- Extremely fast reverse recovery time
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- RoHS pliant
- High junction operating temperature capability (Tj(max) = 175 °C)