WNSC2D201200-A
description
Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency switching mode power supplies. h Ro HS alogen-Free
- Q101 Qualified
2. Features and benefits
- Highly stable switching performance
- High forward surge capability IFSM
- Extremely fast reverse recovery time
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- Ro HS pliant
- High junction operating temperature capability (Tj(max) = 175 °C)
- AEC-Q101 qualified
3. Applications
- EV On Board Chargers
- EV DC-DC converters
- Other EV HV systems
4. Quick reference data
Table 1. Quick reference data Symbol Parameter Absolute maximum rating
Conditions
VRRM repetitive peak reverse voltage
IF continuous forward current
Tj junction temperature
Symbol Parameter
Static characteristics
Tmb ≤ 134 °C, DC; Fig. 2 Conditions
VF forward voltage
Dynamic characteristics
IF = 20 A; Tj = 25 °C;...
