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WNSC2D201200-A - Silicon Carbide Diode

General Description

Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency switching mode power supplies.

2.

Key Features

  • Highly stable switching performance.
  • High forward surge capability IFSM.
  • Extremely fast reverse recovery time.
  • Superior in efficiency to Silicon Diode alternatives.
  • Reduced losses in associated MOSFET.
  • Reduced EMI.
  • Reduced cooling requirements.
  • RoHS compliant.
  • High junction operating temperature capability (Tj(max) = 175 °C).
  • AEC-Q101 qualified 3.

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WNSC2D201200-A Silicon Carbide Diode Rev.01 - 16 October 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency switching mode power supplies. h RoHS alogen-Free AEC - Q101 Qualified 2. Features and benefits • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant • High junction operating temperature capability (Tj(max) = 175 °C) • AEC-Q101 qualified 3. Applications • EV On Board Chargers • EV DC-DC converters • Other EV HV systems 4. Quick reference data Table 1.