WNSC2D201200CW-A
description
Dual Silicon Carbide Schottky diode in a TO247 plastic package, designed for high frequency switching mode power supplies. h Ro HS alogen-Free
- Q101 Qualified
2. Features and benefits
- Highly stable switching performance
- High forward surge capability IFSM
- Extremely fast reverse recovery time
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- Ro HS pliant
- High junction operating temperature capability (Tj(max) = 175 °C)
- AEC-Q101 qualified
3. Applications
- EV On Board Chargers
- EV DC-DC converters
- Other EV HV systems
4. Quick reference data
Table 1. Quick reference data Symbol Parameter Absolute maximum rating
Conditions
VRRM repetitive peak reverse voltage
IO limiting average forward Tmb ≤ 143 °C; DC; both diodes current
Tj junction temperature
Symbol Parameter
Conditions
Static characteristics
VF forward voltage
Dynamic characteristics
IF = 10 A;...
