Weitron Technology 2SD1802
NPN Transistor
| Part No. | 2SD1802 |
|---|---|
| Datasheet | 2SD1802 Download |
| Manufacturer |  Weitron Technology |
| Description | NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits 60 50 6.0 3.0 1.0 -55 to +150 -55 to +150 Unit V V V µA W ˚C ˚CELECTRICAL CHARACTERISTICS
(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=10µA Symbol BVCBO BVCEO BVEBO ICBO IEBO Min 60 50 6.0 Typ Max 1.0 1.0 Unit V V V µA µA Collector-Emitter Breakdown Voltage IC=1.0mA Emitter-Base Breakdown Voltage IE=10µA Collector Cutoff Current VCB=40V Collector Cutoff Current VEB =4.0V WEITRON 1/4 14-Jul-06 2SD1802 ON CHARACTERISTICS DC Current Gain VCE=2V, IC=0.1A VCE=2V, IC=3.0A Collector-Emitter Saturation Voltage IC =2A, IB =0.1A Base-Emitter Saturation Voltage IC =2A, IB =0.1A hFE(1) hFE(2) VCE(sat) VBE(sat) 100 35 560 0.5 1.2 V V DYNAMIC CHARACTERISTICS Transition Frequency VCE=10V, I C=50mA Output Capacitance VCB=10V, I...
