MMBTA44 Datasheet | Weitron Technology

.. High-Voltage NPN Transistor Surface Mount COLLECTOR 3 SOT-23 3 1 1 BASE 2 EMITTER Maximum Ratings Rating C ollector-E mitter V oltage C ollector-B as e V oltage E mitter-B as e V Oltage C ollector C urrent-C ontinuous Symbol VCEO VCBO VEBO IC Symbol PD R JA PD R JA TJ,Tstg Value 400 450 6.0 300 Max 225 1.8 556 350 2.8 357 -55 to +150 Unit Vdc Vdc Vdc m Adc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Unit m W m W/ C C/W m W m W/ C C/W C Device Marking MMBTA44=3D Electrical Characteristics Off Characteristics (T A =25 C Unles s Otherwis e noted) Characteristics Symbol Min Max 100 100 Unit Collector-Emitter Breakdown Voltage(3) (IC=1.0m Adc.IB=0) Collector-Base Breakdown Voltage (IC=100 u Adc, IE=0) Emitter-Base Breakdown Voltage (IE=10 u Adc, IC=0) Base Cutoff Current (VCB=400 Vdc, IE=0) Emitter Cutoff Current VEB=4V, IC=0 1.FR-5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. 3.Pulse Test:Pulse Width 300 µS, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 400 450 6.0 Vdc Vdc Vdc n Adc n Adc - WEITRON http://.weitron..tw Electrical Characteristics (TA=25 Characteristics C unless otherwise noted) (Countinued) Symbol Min WE IT R ON Max Unit On Characteristics DC Current Gain (IC= 1.0 m Adc, VCE=10Vdc) (IC= 10 m Adc, VCE= 10Vdc) (IC= 50 m Adc, VCE= 10Vdc) (IC= 100 m Adc, VCE= 10Vdc) Collector-Emitter Saturation Voltage(3) (IC= 1.0 m Adc, IB= 0.1 m Adc) (IC= 10 m Adc, IB= 1.0 m Adc) (IC= 50 m Adc, IB= 5.0 m Adc) Base-Emitter Saturation Voltage (3) (IC= 10 m Adc, IB= 1.0 m Adc) Current-Gain-Bandwidth Product (IC= 10 m Adc, VCE= 10 Vdc, f=10MHz) VCE(sat) HFE(1) HFE(2) HFE(3) HFE(4) 40 50 45 20 - 2.00 . - 0.40 0.50 0.75 Vdc VBE(sat) - 0.75 Vdc f T - MHz WEITRON...