Weitron Technology MPSA13
Plastic-Encapsulate Transistros NPN Darlington Transistor
| Part No. | MPSA13 |
|---|---|
| Datasheet | MPSA13 Download |
| Manufacturer |  Weitron Technology |
| Description | Plastic-Encapsulate Transistros NPN Darlington Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
(T =25 C Unless O therwise Specified) A Rating Collector-Emitter Voltage Collector-base Voltage Emitter-base Voltage Collector Current Total Power Dissipation(TA =25˚C) Operating Junction and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ,Tstg Value 30 30 10 500 0.625 - 55~+150 Unit V V V mA W ˚CELECTRICAL CHARACTERISTICS
(TA=25C Unless otherwise noted) Characteristic Collector-base breakdown voltage IC=100µA,IE=0 IC=1mA,IB=0 Symbol V( BR) CB O V( BR) CE O V( BR) EB O I CB O I EBO MPSA13 MPSA14 MPSA13 MPSA14 Min 30 30 10 Max 0.1 0.1 Unit V V V µA µA V V MHz Collector-emitter breakdown voltage Emitter-base breakdown voltage IE=100µA,IC=0 VCB=30V,IE=0 VEB=10V,IC=0 Collector cut-off current Emitter cut-off current DC curent gain1 VCE=5V,IC=10mA VCE=5V,IC=100mA H FE (1) H FE (2) V CE (sat) V BE( on) 5000 10000 10000 20000 1.5 2.0 Collector-emitter saturation voltage1 IC=100mA,IB=0.1mA VCE=5V,IC=10mA Base-emitter voltage1 Transition frequency VCE=5V,IC=10mA,F=100Mhz fT 125 - Note: 1.Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
