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MUN5311DW Series Dual Bias Resistor Transistor NPN+PNP Silicon
P b Lead(Pb)-Free
1 6 5 4
Q2
R2 R1
2
R1
6 5
R2
4
Q1
3
1
2
3
SOT-363(SC-88)
Maximum Ratings ( TA=25˚C unless otherwise noted, common for Q1 adn Q2, -minus sign for Q1(PNP) omitted)
Rating
Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous
Symbol
VCEO VCBO IC
Value
50 50 100
Unit
Vdc Vdc mAdc
Thermal Characteristics
Characteristics(One Junction Heated)
Total Device Dissipation TA=25˚C Derate above 25˚C Thermal Resistance, Junction to Ambient
Symbol
PD
Max
187(1) 256(2) 1.5(1) 2.