WTD882 Datasheet | Weitron Technology

WTD772 WTD882 PNP/NPN Epitaxial Planar Transistors P b Lead(Pb)-Free TO-252/D-PAK 1. BASE 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-E m itter Voltage Collector-B as e Voltage E m itter-B as e Voltage Collector Current (DC) Collector Current (P uls e) B as e Current Total Device Dis s ipation Tc=2 5° C TA =2 5° C J unction Tem perature S torage, Tem perature (1 ) Symbol V CE O V CB O VE B O I C(DC) IC (P uls e) I B (P uls e) PD Tj Ts tg PNP/WTD772 NPN/WTD882 30 -3 0 -4 0 40 -5 . 0 5.0 3.0 -3 . 0 -7 . 0 -0 . 6 10 1.4 150 -5 5 to +1 5 0 7.0 0.6 Unit Vdc Vdc Vdc Adc Adc Adc W C C Device Marking WT D7 7 2 =B 7 7 2 , WT D8 8 2 =D8 8 2 ELECTRICAL CHARACTERISTICS Characteristics Collector-E m itter B reakdown Voltage (I C = -1 0 / 1 0 m Adc, I B =0 ) Collector-B as e B reakdown Voltage (I C = -1 0 0 / 1 0 0 µAdc, I E =0 ) E m itter-B as e B reakdown Voltage (I E = -1 0 0 / 1 0 0 µAdc, I C =0 ) Collector Cutoff Current (V CE = -3 0 / 3 0 Vdc, I B =0 ) Collector Cutoff Current (V CB = -4 0 / 4 0 Vdc, I E =0 ) E m itter Cutoff Current (V E B = -6 . 0 / 6 . 0 V d c, I C =0 ) N OT E : 1 . P W 3 5 0 us , duty cycle 2 % Symbol Min Max -1 . 0 / 1 . 0 -1 . 0 / 1 . 0 -1 . 0 / 1 . 0 Unit Vdc Vdc Vdc u Adc u Adc u Adc V (B R )CE O -3 0 / 3 0 V (B R )CB O -4 0 / 4 0 V (B R )E B O -5 . 0 / 5 . 0 I CE 0 I CB O IE B O - WEITRON http://.weitron..tw .Data Sheet.in WTD772 WTD882 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= -1.0/1.0 Adc, VCE=-2.0/2.0Vdc) DC Current Gain (IC= -100/100 m Adc, VCE= -2.0/2.0 Vdc) Collector-Emitter Saturation Voltage (IC= -2.0/2.0 Adc, IB= -0.2/0.2m Adc) Base-Emitter Saturation Voltage (IC= -2.0/2.0 Adc, IB= -0.2/0.2m Adc) Current-Gain-Bandwidth Product (IC= -0.1/0.1 m Adc, VCE=-5.0/5.0 Vdc, f=10MHz) h FE (1) h FE (2) VCE(sat) VBE(sat) f T 60 32 - - 400 -0.5/0.5 -2.0/2.0 Vdc Vdc 80/90 - MHz Classification...