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WGF10N65SE
650V N-Channel MOSFET
TO -220F
WGF10N65SE
Features:
□ Low Intrinsic Capacitances. □ Excellent Switching Characteristics.
r □ Extended Safe Operating Area. o □ Unrivalled Gate Charge :Qg=35nC (Typ.). t □ BVDSS=650 V,ID=10A c □ RDS(on) : 0.9 Ω (Max) @VG=10V u □ 100% Avalanche Tested
D(2) G(1)
ndS(3) ico Absolute Maximum Ratings (Ta=25℃ unless otherwise noted)
1.Gate (G) 2.Drain (D) 3.Source (S)
Sy mbol VDSS
ID
VGSS E AS IAR PD Tj T stg
Drain-Source Voltage Drain Current
Sem Parameter
e Gate-Source Voltage s Single Pulse Avalanche Energy (note1) oo Avalanche Current (note2)
Power Dissipation (Tj=25℃)
G Junction Temperature(Max) ildStorage Temperature
Value
Unit
650
V
Tj=25 ℃
10
A
Tj =100℃
6.
WGF10N65SE Datasheet
