WGF10N65SE
WGF10N65SE is 650V N-Channel MOSFET manufactured by WildGoose.
Features
:
- Low Intrinsic Capacitances.
- Excellent Switching Characteristics. r
- Extended Safe Operating Area. o
- Unrivalled Gate Charge :Qg=35n C (Typ.). t
- BVDSS=650 V,ID=10A c
- RDS(on) : 0.9 Ω (Max) @VG=10V u
- 100% Avalanche Tested
D(2) G(1) nd S(3) ico Absolute Maximum Ratings (Ta=25℃ unless otherwise noted)
1.Gate (G) 2.Drain (D) 3.Source (S)
Sy mbol VDSS
VGSS E AS IAR PD Tj T stg
Drain-Source Voltage Drain Current
Sem Parameter e Gate-Source Voltage s Single Pulse Avalanche Energy (note1) oo Avalanche Current (note2)
Power Dissipation (Tj=25℃)
G Junction Temperature(Max) ild Storage Temperature
Value
Unit
Tj=25 ℃
Tj =100℃
380 m J
℃
-55~+150
℃
WMaximum lead temperature for soldering purpose,1/8’from case for 5 seconds
℃
Thermal Characteristics
Sy mbol
Parameter
Typ.
Max.
Unit...
