WGF18N65
WGF18N65 is 650V N-Channel MOSFET manufactured by WildGoose.
Features
- Low Intrinsic Capacitances
- Excellent Switching Characteristics
- Extended Safe Operating Area
- Unrivalled Gate Charge :Qg= 50n C (Typ.)
- BVDSS=650V,ID=18A
- RDS(on) :0.42 Ω (Max) @VG=10V
- 100% Avalanche Tested
GD S G!
!
- ◀▲
- -
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TO‐220F
G‐Gate,D‐Drain,S‐Sourse
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol
VDSS
VGS EAS IAR PD TJ,TSTG
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25℃)
-continuous (Tc=100℃)
Gate-Sourse Voltage
Single Plused Avanche Energy (Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds
WGF18 N65
650 18- 11.4- ±30 1020 18 95 -55 ~...