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WGF65R850 - 650V N-Channel MOSFET

Key Features

  • Low Intrinsic Capacitances.
  • Excellent Switching Characteristics.
  • Extended Safe Operating Area.
  • Unrivalled Gate Charge :Qg=12 nC(Typ. ).
  • VDSS=650 V,ID=6A.
  • RDS(on) : 0.85 Ω (Max) @VG=10V.
  • 100% Avalanche Tested D(2) G(1) S(3) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter VDSS ID VGSS E AS IDM PD Tj Tstg dv/dt Drain-Source Voltage Drain Current Gate-Source Voltage Single Pulse Avalanche Energy (not.

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Datasheet Details

Part number WGF65R850
Manufacturer WildGoose
File Size 2.27 MB
Description 650V N-Channel MOSFET
Datasheet download datasheet WGF65R850 Datasheet

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Full PDF Text Transcription (Reference)

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WGF65R850 650V N-Channel MOSFET TO-220F WGF65R850 Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg=12 nC(Typ.). □ VDSS=650 V,ID=6A □ RDS(on) : 0.85 Ω (Max) @VG=10V □ 100% Avalanche Tested D(2) G(1) S(3) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter VDSS ID VGSS E AS IDM PD Tj Tstg dv/dt Drain-Source Voltage Drain Current Gate-Source Voltage Single Pulse Avalanche Energy (note1) Pulsed Drain Current (note2) Power Dissipation (Tj=25℃ ) Junction Temperature(Max) Storage Temperature MOSFET dv/dt ruggeness,VDS=0V...480V Tj=25℃ 1.Gate (G) 2.Drain (D) 3.Source (S) Value 650 6.