WGF65R850
WGF65R850 is 650V N-Channel MOSFET manufactured by WildGoose.
Features
:
- Low Intrinsic Capacitances.
- Excellent Switching Characteristics.
- Extended Safe Operating Area.
- Unrivalled Gate Charge :Qg=12 n C(Typ.).
- VDSS=650 V,ID=6A
- RDS(on) : 0.85 Ω (Max) @VG=10V
- 100% Avalanche Tested
D(2) G(1)
S(3)
Absolute Maximum Ratings (Ta=25℃ unless otherwise noted)
Symbol
Parameter
VDSS ID
VGSS E AS IDM PD Tj Tstg dv/dt
Drain-Source Voltage Drain Current Gate-Source Voltage Single Pulse Avalanche Energy (note1)
Pulsed Drain Current (note2) Power Dissipation (Tj=25℃ ) Junction Temperature(Max) Storage Temperature MOSFET dv/dt ruggeness,VDS=0V...480V
Tj=25℃
1.Gate (G) 2.Drain (D) 3.Source (S)
Value 650 6.0 ±30 120
18 26 150 -55~+150 50
Unit V A V m J A W ℃ ℃
V/n S
Thermal Characteristics
Symbol
Parameter
Rθ JC
Thermal Resistance Junction to Case
Rθ JA
Thermal Resistance Junction to Ambient
Typ.
Max.
Unit
- 3.13
℃/W
- 70
℃/W
Wild Goose S emiconductor Rev. A1.0, 2015 1
650V N-Channel...
