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WNM3011 - N-Channel MOSFET

General Description

The WNM3011 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion and power switch applications.

Key Features

  • z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L.

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Datasheet Details

Part number WNM3011
Manufacturer Will Semiconductor
File Size 194.04 KB
Description N-Channel MOSFET
Datasheet download datasheet WNM3011 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM3011 N-Channel, 30V, 5.7A, Power MOSFET WNM3011 Http://www.willsemi.com V(BR)DSS 30V Rds(on) (Ÿ) 0.028@ 10V 0.039@ 4.5V Descriptions The WNM3011 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM3011 is Pb-free. SOT-23-6L DDS 65 4 123 DDG Configuration (Top View) Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-6L Applications 6 54 3011 YYWW 1 23 3011 YY WW = Device Code =Year =Week Marking z Driver for Relay, Solenoid, Motor, LED etc.