WNM07N60 Datasheet | Will Semiconductor

Description The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other applications. WNM07N60/WNM07N60F Features - 600V@TJ=25°C - Typ.RDS(on)=1.0 Ω - Low gate charge - 100% avalanche tested - 100% Rg tested TOT-O22- 0 GD S TO-220F WNM07N60 =Devices code Y Y =Year WW =Week WNM07N60F =Devices code Y Y =Year WW =Week Order Information Device Package WNM07N60_3/T TO-220 WNM07N60F_3/T TO-220-F Units/Tube 50 50 Absolution Maximum Ratings TA=25o C unless otherwise noted Parameter Symbol WNM07N60 WNM07N60F Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current Single Pulsed Avalanche Energy...