WNM07N60 Overview
The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other applications.
WNM07N60 Key Features
- 600V@TJ=25°C
- Typ.RDS(on)=1.0 Ω
- Low gate charge
- 100% avalanche tested
- 100% Rg tested