WNM07N65 Datasheet | Will Semiconductor

Description The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other applications. WNM07N65/WNM07N65F Features - 650V@TJ=25°C - Typ.RDS(on)=1.0 Ω - Low gate charge - 100% avalanche tested - 100% Rg tested TOT-O22- 0 FG S GD S TO-220F CC Y W =Devices code = Special Code =Year =Week WNM07N65F =Devices code CC = Special Code Y =Year W =Week Order Information Device Package WNM07N65_3/T TO-220 WNM07N65F_3/T TO-220-F Units/Tube 50 50 Absolution Maximum Ratings TA=25o C unless otherwise noted Parameter Symbol WNM07N65 WNM07N65F Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current Single Pulsed Avalanche...