WNM07N65F - N-Channel MOSFET

This page provides the datasheet information for the WNM07N65F, a member of the WNM07N65 N-Channel MOSFET family.

Product Overview

Will Semiconductor

Part number	WNM07N65F
Manufacturer	Will Semiconductor
File Size	1.44 MB
Description	N-Channel MOSFET
Datasheet	WNM07N65F Datasheet
Additional preview pages of the WNM07N65F datasheet.

The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge.

650V@TJ=25°C.
Typ. RDS(on)=1.0 Ω.
Low gate charge.
100% avalanche tested.
100% Rg tested D GDS TOT-O22- 0 FG S GD S TO-220F WNM07N65 CC Y W =Devices code = Special Code =Year =Week WNM07N65F =Devices code CC = Special Code Y =Year W =Week Order Information Device Package WNM07N65_3/T TO-220 WNM07N65F_3/T TO-220-F Units/Tube 50 50 Absolution Maximum Ratings TA=25oC unless otherwise noted Parameter Symbol WNM07N65 WNM07N65F Drain-Source Voltage Gate-S.

Other Datasheets by Will Semiconductor

Published: Apr 29, 2017 |