WNM07N60F - N-Channel MOSFET

This page provides the datasheet information for the WNM07N60F, a member of the WNM07N60 N-Channel MOSFET family.

Product Overview

Will Semiconductor

Part number	WNM07N60F
Manufacturer	Will Semiconductor
File Size	1.70 MB
Description	N-Channel MOSFET
Datasheet	WNM07N60F Datasheet
Additional preview pages of the WNM07N60F datasheet.

The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge.

600V@TJ=25°C.
Typ. RDS(on)=1.0 Ω.
Low gate charge.
100% avalanche tested.
100% Rg tested D GDS TOT-O22- 0 G S GD S TO-220F WNM07N60 =Devices code Y Y =Year WW =Week WNM07N60F =Devices code Y Y =Year WW =Week Order Information Device Package WNM07N60_3/T TO-220 WNM07N60F_3/T TO-220-F Units/Tube 50 50 Absolution Maximum Ratings TA=25oC unless otherwise noted Parameter Symbol WNM07N60 WNM07N60F Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous.

Other Datasheets by Will Semiconductor

Published: Apr 29, 2017 |