WNM12N65F - N-Channel MOSFET

This page provides the datasheet information for the WNM12N65F, a member of the WNM12N65 N-Channel MOSFET family.

Product Overview

Will Semiconductor

Part number	WNM12N65F
Manufacturer	Will Semiconductor
File Size	1.01 MB
Description	N-Channel MOSFET
Datasheet	WNM12N65F Datasheet
Additional preview pages of the WNM12N65F datasheet.

The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge.

650V@TJ=25°C.
Typ. RDS(on)=0.57Ω.
Low gate charge.
100% avalanche tested.
100% Rg tested D GDS TOT-O22- 0 12N65 12N65F G S GD S TO-220F WNM12N65 =Devices code Y Y =Year WW =Week WNM12N65 F =Devices code Y Y =Year WW =Week Order Information Device Package WNM12N65_3/T TO-220 WNM12N65F_3/T TO-220-F Units/Tube 50 50 Absolution Maximum Ratings TA=25oC unless otherwise noted Parameter Symbol WNM12N65 WNM12N65F Drain-Source Voltage Gate-Source Voltage TC=.

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Published: Apr 29, 2017 |