Datasheet Details
| Part number | WNM12N65 |
|---|---|
| Manufacturer | Will Semiconductor |
| File Size | 1.01 MB |
| Description | N-Channel MOSFET |
| Datasheet |
 WNM12N65 Datasheet
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General Description
The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge.
Key Features
- 650V@TJ=25°C.
- Typ. RDS(on)=0.57Ω.
- Low gate charge.
- 100% avalanche tested.
- 100% Rg tested D GDS TOT-O22- 0 12N65 12N65F G S GD S TO-220F WNM12N65 =Devices code Y Y =Year WW =Week WNM12N65 F =Devices code Y Y =Year WW =Week Order Information Device Package WNM12N65_3/T TO-220 WNM12N65F_3/T TO-220-F Units/Tube 50 50 Absolution Maximum Ratings TA=25oC unless otherwise noted Parameter Symbol WNM12N65 WNM12N65F Drain-Source Voltage Gate-Source Voltage TC=.