WNM12N65 Datasheet | Will Semiconductor

Description The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other applications. WNM12N65/WNM12N65F Features - 650V@TJ=25°C - Typ.RDS(on)=0.57Ω - Low gate charge - 100% avalanche tested - 100% Rg tested TOT-O22- 0 12N65 12N65F GD S TO-220F WNM12N65 =Devices code Y Y =Year WW =Week WNM12N65 F =Devices code Y Y =Year WW =Week Order Information Device Package WNM12N65_3/T TO-220 WNM12N65F_3/T TO-220-F Units/Tube 50 50 Absolution Maximum Ratings TA=25o C unless otherwise noted Parameter Symbol WNM12N65 WNM12N65F Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current Single Pulsed Avalanche Energy C VDS 650 VGS...