WNM12N65 Overview
The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other applications.
WNM12N65 Key Features
- 650V@TJ=25°C
- Typ.RDS(on)=0.57Ω
- Low gate charge
- 100% avalanche tested
- 100% Rg tested