WNM3062A
WNM3062A is 30V 18.5A Single N-Channel Power MOSFET manufactured by Will Semiconductor.
Description
The WNM3062A is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM3062A is in pliance with Ro HS.
Features
DFN2X2-6L
Pin configuration (Top view)
- Trench Technology
- Supper high density cell design
- Low ON resistance
- Package DFN2X2-6L
Applications
- DC/DC converters
- Power supply converters circuit
- Power Switching for portable device
3062 ASYW
3062 = Device Code AS = Special Code Y = Year W = Week(A~z)
Marking
Order information
Device
Package
Shipping
WNM3062A-6/TR DFN2x2-6L 3000/Tape&Reel
Will Semiconductor Ltd.
2022/06/21- Rev.1.0
Absolute Maximum ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current d Pulsed Drain Current c Avalanche Energy L=0.3m H Power Dissipation a
Operating Junction Temperature Storage Temperature Range
TA=25°C TA=70°C
TA=25°C TA=70°C
Symbol VDS VGS
IDM EAS
TJ...
