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WPM1483 - P-Channel MOSFET

General Description

The WPM1483 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit .

Key Features

  • WPM1483 Http//:www. sh-willsemi. com SOT-23 Pin configuration (Top view).
  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package SOT-23.

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Datasheet Details

Part number WPM1483
Manufacturer Will Semiconductor
File Size 780.80 KB
Description P-Channel MOSFET
Datasheet download datasheet WPM1483 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WPM1483 Single P-Channel, -12V, -3.5A, Power MOSFET VDS (V) -12 Typical Rds(on) (Ω) 0.031@ VGS=–4.5V 0.040@ VGS=–2.5V 0.056@ VGS=–1.8V Descriptions The WPM1483 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit . Standard Product WPM1483 is Pb-free and Halogen-free. Features WPM1483 Http//:www.sh-willsemi.com SOT-23 Pin configuration (Top view)  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-23 Applications  Driver for Relay, Solenoid, Motor, LED etc.