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WPM1488 - P-Channel MOSFET

General Description

The WPM1488 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package SOT-323.

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Datasheet Details

Part number WPM1488
Manufacturer Will Semiconductor
File Size 620.50 KB
Description P-Channel MOSFET
Datasheet download datasheet WPM1488 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WPM1488 Single P-Channel, -12V, -1.4A, Power MOSFET VDS (V) -12 Typical Rds(on) (Ω) 0.080@ VGS=–4.5V 0.086@ VGS=–3.6V 0.105@ VGS=–2.5V ID (A) -1.2 -1.0 -1.0 Descriptions The WPM1488 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM1488 is Pb-free. WPM1488 www.sh-willsemi.com SOT-323 Pin configuration (Top view) Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-323 Applications  Driver for Relay, Solenoid, Motor, LED etc.