WPM1485 - P-Channel MOSFET

Will Semiconductor

General Description

The WPM1485 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

Pin configuration (Top view).
Trench Technology.
Supper high density cell design.
Excellent ON resistance for higher DC current.
Extremely Low Threshold Voltage.
Small package DFN2×2-6L.

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WPM1485 p-channel mosfet by Will Semiconductor - Datasheet Preview

Datasheet Details

Part number	WPM1485
Manufacturer	Will Semiconductor
File Size	786.34 KB
Description	P-Channel MOSFET
Datasheet	WPM1485 Datasheet

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Full PDF Text Transcription (Reference)

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WPM1485 Single P-Channel, -12V, -7.4A, Power MOSFET VDS (V) -12 Rds(on) (Ω) 0.015@ VGS=–4.5V 0.020@ VGS=–2.5V 0.030@ VGS=–1.8V Descriptions The WPM1485 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM1485 is Pb-free and Halogen-free. WPM1485 Http//:www.willsemi.com DFN2×2-6L D DS 6 54 D S 1 23 D DG Features Pin configuration (Top view)  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package DFN2×2-6L Applications  Driver for Relay, Solenoid, Motor, LED etc.