WNM3017 - MOSFET

WillSEMI

General Description

The WNM3017 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

Trench Technology.
Supper high density cell design.
Excellent ON resistance.
Extremely Low Threshold Voltage.
Small package DFN2x2-6L.

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WNM3017 mosfet by WillSEMI - Datasheet Preview

Datasheet Details

Part number	WNM3017
Manufacturer	WillSEMI
File Size	844.37 KB
Description	MOSFET
Datasheet	WNM3017 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM3017 Single N-Channel, 30V, 6.2A, Power MOSFET VDS (V) 30 Typical RDS(on) (mΩ) 17 @ VGS=10V Descriptions The WNM3017 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM3017 is Pb-free. WNM3017 Http://www.sh-willsemi.