WNM3017 Description
WNM3017 Single N-Channel, 30V, 6.2A, Power MOSFET VDS (V) 30 Typical RDS(on) (mΩ) 17 @ VGS=10V Descriptions The WNM3017 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit.
WNM3017 Key Features
- Trench Technology
- Supper high density cell design
- Excellent ON resistance
- Extremely Low Threshold Voltage
- Small package DFN2x2-6L