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WNM3019 - MOSFET

General Description

The WNM3019 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in small signal switch.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • HBM ESD protection >2 kV.
  • Small package SOT-523.

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Datasheet Details

Part number WNM3019
Manufacturer WillSEMI
File Size 496.71 KB
Description MOSFET
Datasheet download datasheet WNM3019 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WNM3019 Small Signal N-Channel, 30V, 0.2A, MOSFET VDS (V) Typical Rds(on) (Ω) 1.2@ VGS=10V 30 1.4@ VGS=4.5V 1.9@ VGS=2.5V ESD Rating: 2000V HBM Descriptions The WNM3019 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in small signal switch. Standard Product WNM3019 is Pb-free and Halogen-free. WNM3019 Http://www.sh-willsemi.com Pin configuration (Top view) Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  HBM ESD protection >2 kV  Small package SOT-523 Applications  Driver: Relay, Solenoid, Lamps,Hammers etc.