WNM3018 Overview
WNM3018 Small Signal N-Channel, 30V, 0.2A, MOSFET VDS (V) Typical Rds(on) (Ω) 1.2@ VGS=10V 30 1.4@ VGS=4.5V 1.9@ VGS=2.5V ESD Rating: 2000V HBM Descriptions The WNM3018 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
WNM3018 Key Features
- Trench Technology
- Supper high density cell design
- Excellent ON resistance for higher DC current
- HBM ESD protection >2 kV
- Small package SOT-323