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WNM3018 - MOSFET

Datasheet Summary

Description

The WNM3018 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in small signal switch.

Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • HBM ESD protection >2 kV.
  • Small package SOT-323.

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Datasheet Details

Part number WNM3018
Manufacturer WillSEMI
File Size 681.97 KB
Description MOSFET
Datasheet download datasheet WNM3018 Datasheet
Additional preview pages of the WNM3018 datasheet.

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Full PDF Text Transcription

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WNM3018 Small Signal N-Channel, 30V, 0.2A, MOSFET VDS (V) Typical Rds(on) (Ω) 1.2@ VGS=10V 30 1.4@ VGS=4.5V 1.9@ VGS=2.5V ESD Rating: 2000V HBM Descriptions The WNM3018 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in small signal switch. Standard Product WNM3018 is Pb-free and Halogen-free. WNM3018 Http://www.sh-willsemi.com Pin configuration (Top view) Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  HBM ESD protection >2 kV  Small package SOT-323 Applications  Driver: Relay, Solenoid, Lamps,Hammers etc.
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