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WPM1481 - Single P-Channel Power MOSFET

General Description

The WPM1481 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package DFN2.
  • 2-6L WPM1481 Http://www. sh-willsemi. com DFN2.
  • 2-6L DDS 6 54 D S 1 23 D DG Pin configuration (Top view) 6 54 WLSI CYWW 1 WLSI C Y WW 23 = Company Code = Device Code = Year = Week.

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Datasheet Details

Part number WPM1481
Manufacturer WillSEMI
File Size 0.99 MB
Description Single P-Channel Power MOSFET
Datasheet download datasheet WPM1481 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WPM1481 Single P-Channel, -12V, -5.5A, Power MOSFET VDS (V) -12 Typical Rds(on) (Ω) 0.022@ VGS=-4.5V 0.030@ VGS=-2.5V 0.045@ VGS=-1.8V ID (A) -5.5 -4.0 -2.5 Descriptions The WPM1481 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM1481 is Pb-free. Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package DFN2*2-6L WPM1481 Http://www.sh-willsemi.