W986416DH - 1M x 4 BANKS x 16-BITS SDRAM

Datasheet Summary

Description

W986416DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits.

Using pipelined architecture and 0.175 µm process technology, W986416DH delivers a data bandwidth of up to 366M bytes per second (-55).

Features

3.3V ±0.3V power supply.
1048576 words × 4 banks × 16 bits organization.
Self Refresh Current: Standard and Low Power.
CAS latency: 2 and 3.
Burst Length: 1, 2, 4, 8, and full page.
Sequential and Interleave burst.
Burst read, single write operation.
Byte data controlled by DQM.
Power-down Mode.
Auto-precharge and controlled precharge.
4K refresh cycles/64 mS.
Interface: LVTTL.
P.

Winbond

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Datasheet Details

Part number	W986416DH
Manufacturer	Winbond
File Size	1.55 MB
Description	1M x 4 BANKS x 16-BITS SDRAM
Datasheet	W986416DH Datasheet
Additional preview pages of the W986416DH datasheet.

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W986416DH GENERAL DESCRIPTION 1M × 4 BANKS × 16 BITS SDRAM W986416DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits. Using pipelined architecture and 0.175 µm process technology, W986416DH delivers a data bandwidth of up to 366M bytes per second (-55). For different application, W986416DH is sorted into the following speed grades: –55, -6, -7. The -55 parts can run up to 183 MHz/CL3. The -6 parts can run up to 166 MHz/CL3. The -7 parts can run up to 143 MHz/CL3. For handheld device application, we also provide a low power option, the grade of –7L, with Self Refresh Current under 400 µA and work well at 2.7V during Self Refresh Mode. Accesses to the SDRAM are burst oriented.

Published: Apr 17, 2005 |