PFB6N80G Datasheet | Wing On

FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 22.2 n C (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.4 Ω (Typ.) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  AC adaptors Green Package PFI6N80G / PFB6N80G 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 2.4 Ω ID = 5.5 A TO-262 1 2 3 1.Gate 2. Drain 3. Source Drain  Gate  - ◀▲ - -  Source TO-263 1 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current - Continuous (TC = 25o C) - Continuous (TC = 100o C) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note...