PFB6N80G - N-Channel MOSFET

Key Features

 Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 22.2 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 2.4 Ω (Typ. ) @VGS=10V.

PFB6N80G n-channel mosfet by Wing On - Datasheet Preview

Datasheet Details

Part number	PFB6N80G
Manufacturer	Wing On
File Size	907.05 KB
Description	N-Channel MOSFET
Datasheet	PFB6N80G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PFI6N80G / PFB6N80G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 22.2 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.4 Ω (Typ.) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  AC adaptors Green Package PFI6N80G / PFB6N80G 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 2.4 Ω ID = 5.5 A TO-262 1 2 3 1.Gate 2. Drain 3. Source Drain  Gate  ● ◀▲ ● ●  Source TO-263 2 1 3 1.Gate 2. Drain 3.