PFB8N50
PFB8N50 is N-Channel MOSFET manufactured by Wing On.
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 25 n C (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.7 Ω (Typ.) @VGS=10V
APPLICATION
Electronic lamp ballasts based on half bridge topology
PFC (Power Factor Correction) SMPS (Switched Mode Power Supplies)
PFI8N50/PFB8N50
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ = 0.85 Ω ID = 8.0 A
Drain
Gate
- ◀▲
- -
Source
I2-PAK
D2-PAK
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
- Continuous (TC = 25℃)
- Continuous (TC = 100℃)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note...
