PFD7N60EG Datasheet | Wing On

FEATURES  Originative New Design PFU7N60EG / PFD7N60EG 600V N-Channel MOSFET  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 n C (Typ.) BVDSS = 600 V RDS(on) = 1.20 Ω Drain  Gate  - ◀▲ - -  Extended Safe Operating Area  Lower RDS(ON) : 1.20 Ω (Typ.) @VGS=10V  Halogen Free ID = 5.8 A I-PAK(TO-251)  Source D-PAK(TO-252) APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) 1 2 3 1.Gate 2. Drain 3. Source 1 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note...