Datasheet4U Logo Datasheet4U.com

PFF70R590 - N-Channel Super Junction MOSFET

Features

  •  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested BVDSS = 700 V RDS(on) = 0.52Ω ID = 8.0 A Drain  Gate .
  • ◀▲.
  •  Source.

📥 Download Datasheet

Datasheet preview – PFF70R590

Datasheet Details

Part number PFF70R590
Manufacturer Wing On
File Size 905.84 KB
Description N-Channel Super Junction MOSFET
Datasheet download datasheet PFF70R590 Datasheet
Additional preview pages of the PFF70R590 datasheet.

📁 Similar Datasheet

  • PFF7N60 - N-channel MOSFET (PowerGate)
  • PFF13N50 - 500V N-Channel MOSFET (Power Device)
  • PFF18N50 - 500V N-Channel MOSFET (Power Device)
  • PFF2N60 - N-Channel MOSFET (Pyramis Corporation)
  • PFF4N60 - N-Channel MOSFET (Pyramis)
  • PFF4N60 - N-channel MOSFET (PowerGate)
Other Datasheets by Wing On

Full PDF Text Transcription

Click to expand full text
PFP70R590 / PFF70R590 PFP70R590 / PFF70R590 N-Channel Super Junction MOSFET FEATURES  New technology for high voltage device  Low RDS(on) low conduction losses  Small package  Ultra low gate charge cause lower driving requirement  100% avalanche tested BVDSS = 700 V RDS(on) = 0.52Ω ID = 8.0 A Drain  Gate  ● ◀▲ ● ●  Source APPLICATION  Power Factor Correction(PFC)  Switched mode power supply (SMPS)  Uninterruptible Power Supply (UPS) TO-220 G DS TO-220F G DS Absolute Maximum Ratings TC=25oC unless otherwise specified Symbol Parameter PFP70R590 PFF70R590 VDS Drain-Source Voltage (VGS=0V) Drain Current – Continuous (TC = 25oC) ID Drain Current – Continuous (TC = 100oC) 700 8.0 8.0* 5.0 5.
Published: |