Datasheet4U Logo Datasheet4U.com

PFF7N80 - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 35 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.55 Ω (Typ. ) @VGS=10V.

📥 Download Datasheet

Datasheet preview – PFF7N80

Datasheet Details

Part number PFF7N80
Manufacturer Wing On
File Size 1.32 MB
Description N-Channel MOSFET
Datasheet download datasheet PFF7N80 Datasheet
Additional preview pages of the PFF7N80 datasheet.

📁 Similar Datasheet

  • PFF7N60 - N-channel MOSFET (PowerGate)
  • PFF13N50 - 500V N-Channel MOSFET (Power Device)
  • PFF18N50 - 500V N-Channel MOSFET (Power Device)
  • PFF2N60 - N-Channel MOSFET (Pyramis Corporation)
  • PFF4N60 - N-Channel MOSFET (Pyramis)
  • PFF4N60 - N-channel MOSFET (PowerGate)
Other Datasheets by Wing On

Full PDF Text Transcription

Click to expand full text
June 2007 PFP7N80 / PFF7N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.55 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP7N80/PFF7N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 1.9 Ω ID = 7.0 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.
Published: |