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PFF7N65E - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.35 Ω (Typ. ) @VGS=10V  Halogen Free.

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Datasheet preview – PFF7N65E

Datasheet Details

Part number PFF7N65E
Manufacturer Wing On
File Size 1.24 MB
Description N-Channel MOSFET
Datasheet download datasheet PFF7N65E Datasheet
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Full PDF Text Transcription

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PFP7N65E / PFF7N65E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.35 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP7N65E / PFF7N65E 650V N-Channel MOSFET BVDSS = 650 V RDS(on) = 1.35 Ω ID = 6.5 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.
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