PFP12N65E Datasheet | Wing On

FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 40 n C (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.48 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP12N65E/PFF12N65E 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 0.48 Ω ID = 12.2 A TO-220 Drain  Gate  - ◀▲ - -  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter PFF12N65E VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG VISO TL Drain-Source Voltage Drain Current Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source...