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PFP12N65 - 650V N-Channel MOSFET

Datasheet Summary

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 48 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.46 Ω (Typ. ) @VGS=10V.

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Datasheet Details

Part number PFP12N65
Manufacturer Wing On
File Size 1.34 MB
Description 650V N-Channel MOSFET
Datasheet download datasheet PFP12N65 Datasheet
Additional preview pages of the PFP12N65 datasheet.

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Full PDF Text Transcription

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PFP12N65 / PFF12N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 48 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.46 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP12N65/PFF12N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 0.46 Ω ID = 12 A Drain  Gate  ● ◀▲ ● ●  Source TO-220 TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.
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