PFU7N60EG - N-Channel MOSFET

Key Features

 Originative New Design PFU7N60EG / PFD7N60EG 600V N-Channel MOSFET  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 nC (Typ. ) BVDSS = 600 V RDS(on) = 1.20 Ω Drain  Gate .
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 Extended Safe Operating Area  Lower RDS(ON) : 1.20 Ω (Typ. ) @VGS=10V  Halogen Free ID = 5.8 A I-PAK(TO-251)  Source D-PAK(TO-252).

PFU7N60EG n-channel mosfet by Wing On - Datasheet Preview

Datasheet Details

Part number	PFU7N60EG
Manufacturer	Wing On
File Size	1.02 MB
Description	N-Channel MOSFET
Datasheet	PFU7N60EG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PFU7N60EG / PFD7N60EG Green Package FEATURES  Originative New Design PFU7N60EG / PFD7N60EG 600V N-Channel MOSFET  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 nC (Typ.) BVDSS = 600 V RDS(on) = 1.20 Ω Drain  Gate  ● ◀▲ ● ●  Extended Safe Operating Area  Lower RDS(ON) : 1.20 Ω (Typ.) @VGS=10V  Halogen Free ID = 5.8 A I-PAK(TO-251)  Source D-PAK(TO-252) APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) 1 2 3 1.Gate 2. Drain 3. Source 2 1 3 1.Gate 2. Drain 3.