PFU2N100G Datasheet | Wing On

Features  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 n C (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 6.2 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  AC adaptors Green Package 1000V N-Channel MOSFET BVDSS = 1000 V RDS(on) = 6.2 Ω ID = 1.9 A Drain  Gate  - ◀▲ - -  Source I-PAK(TO-251) 1 2 3 1.Gate 2. Drain 3....