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PFU2N100G - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 6.2 Ω (Typ. ) @VGS=10V  Halogen Free.

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Datasheet Details

Part number PFU2N100G
Manufacturer Wing On
File Size 1.02 MB
Description N-Channel MOSFET
Datasheet download datasheet PFU2N100G Datasheet

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Full PDF Text Transcription

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PFU2N100G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 17 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 6.2 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  AC adaptors Green Package PFU2N100G 1000V N-Channel MOSFET BVDSS = 1000 V RDS(on) = 6.2 Ω ID = 1.9 A Drain  Gate  ● ◀▲ ● ●  Source I-PAK(TO-251) 1 2 3 1.Gate 2. Drain 3.
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