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PFU2N65 - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 9.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 4.2 Ω (Typ. ) @VGS=10V.

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Datasheet Details

Part number PFU2N65
Manufacturer Wing On
File Size 0.97 MB
Description N-Channel MOSFET
Datasheet download datasheet PFU2N65 Datasheet

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Full PDF Text Transcription

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July 2008 PFU2N65 / PFD2N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 9.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.2 Ω (Typ.) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters. PFU2N65/PFD2N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 4.2 Ω ID = 1.8 A I-PAK(TO-251) 1 2 3 1.Gate 2. Drain 3. Source Drain  Gate  ● ◀▲ ● ●  Source D-PAK(TO-252) 2 1 3 1.Gate 2. Drain 3.
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