PFU2N70G Datasheet | Wing On

Feb. 2012 PFU2N70G / PFD2N70G Features  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10.5 n C (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 5.5 Ω (Typ.) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters. Green Package PFU2N70G/PFD2N70G 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 5.5 Ω ID = 1.6 A I-PAK(TO-251) 1 2 3 1.Gate 2. Drain 3. Source Drain  Gate  - ◀▲ - -  Source D-PAK(TO-252) 1 3 1.Gate 2. Drain 3....