PFU1N60 Datasheet | Wing On

Aug 2006 PFU1N60 / PFD1N60 Features  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 4.5 n C (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 8.3 Ω (Typ.) @VGS=10V APPLICATION  Low power battery chargers  Switch mode power supply (SMPS)  DC-AC converters. PFU1N60/PFD1N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) = 10.5 Ω ID = 1.0 A I-PAK(TO-251) 1 2 3 1.Gate 2. Drain 3. Source Drain  Gate  - ◀▲ - -  Source D-PAK(TO-252) 1 3 1.Gate 2. Drain 3....