Full PDF Text Transcription for SFTN2906 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SFTN2906. For precise diagrams, and layout, please refer to the original PDF.
SFTN2906 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Parameter Symbol Value Unit Dr...
View more extracted text
Drain 3.Source Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage Drain Current at VGS = 10 V VGS ± 20 V TC = 25℃ TC = 100℃ ID 84 59 A Peak Drain Current TC = 25℃ IDM 336 A Power Dissipation TC = 25℃ Ptot 38 W Single Pulse Avalanche energy at ID = 84 A , RGS = 25 Ω EAS 140 mJ Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 ℃ Thermal Characteristics Parameter Symbol Max. Unit Maximum Thermal Resistance from Juntion to Case RθJC 3.9 K/W Winning Team Dated: 24/11/2017 SFTN2906 Characteristics at TJ = 25℃ unless otherwise specified Parameter Symbol Min
SFTN2906 Datasheet
