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SFTN2906 - N-Channel MOSFET

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Part number SFTN2906
Manufacturer Winning Team
File Size 275.01 KB
Description N-Channel MOSFET
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SFTN2906 N-Channel Enhancement Mode Power MOSFET Drain Gate Source TO-220F Plastic Package 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage Drain Current at VGS = 10 V VGS ± 20 V TC = 25℃ TC = 100℃ ID 84 59 A Peak Drain Current TC = 25℃ IDM 336 A Power Dissipation TC = 25℃ Ptot 38 W Single Pulse Avalanche energy at ID = 84 A , RGS = 25 Ω EAS 140 mJ Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 ℃ Thermal Characteristics Parameter Symbol Max. Unit Maximum Thermal Resistance from Juntion to Case RθJC 3.9 K/W Winning Team Dated: 24/11/2017 SFTN2906 Characteristics at TJ = 25℃ unless otherwise specified Parameter Symbol Min. Typ. Max.
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