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SFTN6011
N-Channel Enhancement Mode Power MOSFET
Drain Gate
Source
TO-220FB Plastic Package 1.Gate 2.Drain 3.Source
Absolute Maximum Ratings Parameter
Symbol
Value
Unit
Gate-Source Voltage Drain Current
Peak Drain Current
VGS
± 20
V
TC = 25℃ TC = 100℃
ID
11 7
A
IDM
22
A
Power Dissipation
TC = 25℃
Ptot
125
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
℃
Thermal Characteristics Parameter
Maximum Thermal Resistance from Juntion to Case Maximum Thermal Resistance from Juntion to Ambient
Symbol RθJC RθJA
Max. 1 62
Unit ℃/W ℃/W
Winning Team
Dated: 03/05/2017
SFTN6011
Characteristics at TC = 25℃ unless otherwise specified
Parameter
Symbol Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage at ID = 0.
SFTN6011 Datasheet
