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SFTN6016MP
N-Channel Enhancement Mode MOSFET
Drain
Gate
Source
1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain
DFN3030 Plastic Package
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Drain-Gate Voltage Drain Current - Continuous 1)
Drain Current – Pulse 2)
TC = 25℃ TC = 100℃
Power Dissipation 3)
TC = 25℃
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM PD Tj, Tstg
Thermal Characteristics
Parameter
Symbol
Thermal Resistance - Junction to Ambient 1) Thermal Resistance - Junction to Case 1)
1) The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2) The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 3) The power dissipation is limited by 150℃ junction temperature.
SFTN6016MP Datasheet
