SFTN6016MP Description
SFTN6016MP N-Channel Enhancement Mode MOSFET Drain Gate Source 1. 2) The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 3) The power dissipation is limited by 150℃ junction temperature.
- Part: SFTN6016MP
- Manufacturer: Winning Team
- Size: 249.40 KB
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