SFTN6016MP Overview
SFTN6016MP N-Channel Enhancement Mode MOSFET Drain Gate Source 1. 2) The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 3) The power dissipation is limited by 150℃ junction temperature.
Datasheet Details
| Part number | SFTN6016MP |
|---|---|
| Datasheet | SFTN6016MP-WinningTeam.pdf |
| File Size | 249.40 KB |
| Manufacturer | Winning Team |
| Description | N-Channel MOSFET |
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