SFTN6016MP Datasheet | Winning Team

N-Channel Enhancement Mode MOSFET Drain Gate Source 1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain DFN3030 Plastic Package Absolute Maximum Ratings Parameter Drain-Source Voltage Drain-Gate Voltage Drain Current - Continuous 1) Drain Current - Pulse 2) TC = 25℃ TC = 100℃ Power Dissipation 3) TC = 25℃ Operating Junction and Storage Temperature Range Symbol VDS VGS IDM PD Tj, Tstg Thermal Characteristics Parameter Symbol Thermal Resistance - Junction to Ambient 1) Thermal Resistance - Junction to Case 1) 1) The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2) The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 3) The power dissipation is limited by 150℃ junction temperature. RθJA RθJC Value 60 ± 20 44 28 100 42 - 55 to + 150 Max. 75 3 Unit V V A A W ℃ Unit ℃/W ℃/W Winning Team 互創國際 Dated: 20/07/2017 Rev:01 Characteristics at Tj = 25℃ unless otherwise specified Parameter Drain-Source Breakdown Voltage at ID = 250 µA Gate-Source Threshold Voltage at VGS = VDS, ID = 250 μA Drain-Source Leakage Current at VDS = 48 V ,TJ = 25℃ at VDS = 48 V ,TJ =...