Part SBP13009A
Description High Voltage Fast-Switching NPN Power Transistor
Category Transistor
Manufacturer Winsemi
Size 357.81 KB
Winsemi

SBP13009A Overview

Description

This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 12 25 6.0 Units V V V A A A A W ℃ ℃ Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at TC = 25℃ Total Dissipation at TA = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms 12 100 2.3 - 40 ~ 150 - 40 ~ 150 Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Symbol RθJc RθJA Parameter Jan 2009.

Key Features

  • Very High Switching Speed
  • High Voltage Capability
  • Wide Reverse Bias SOA