SBP13009D Overview
Description
This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 12 25 6.0 12 100 2.2 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Symbol RθJc RθJA Parameter Jan 2009.
Key Features
- Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in free wheeling diode
