Datasheet Summary
WFF15N60 Product Description
Silicon N-Channel MOSFET
Features
- 15A,600V, RDS(on)(Max0.52Ω)@VGS=10V
- Ultra-low Gate charge(Typical 36nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp...