Winsemi WFF630
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.| Part No. | WFF630 |
|---|---|
| Datasheet | WFF630 Download |
| Manufacturer |  Winsemi |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V● Ultra-low Gate Charge(Typical 22nC)
● Fast Switching Capability
● 100%Avalanche Tested
● Maximum Junction Temperature Range(150℃)
GENERAL DESCRIPTION
This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Maximum lead Temperature for soldering purposes (Note1) (Note 2) (Note 1) (Note 3) Value 200 9 5.7 36 ±30 160 7.2 5.5 40 0.35 -55~150 300 Units V A A A V mJ mJ V/ns W W/℃ ℃ ℃ Thermal Characteristics Symbol Parameter RQJC RQCS RQJA Thermal Resista...
