Datasheet Summary
Silicon N-Channel MOSFET
Features
- 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 22nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor...