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WFF630 - Silicon N-Channel MOSFET

Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 22nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet preview – WFF630

Datasheet Details

Part number WFF630
Manufacturer Winsemi
File Size 687.91 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFF630 Datasheet
Additional preview pages of the WFF630 datasheet.

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Full PDF Text Transcription

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WFF630 Silicon N-Channel MOSFET Features ■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 22nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
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