WFF630 - Silicon N-Channel MOSFET

Winsemi

General Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Key Features

9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V.
Ultra-low Gate Charge(Typical 22nC).
Fast Switching Capability.
100%Avalanche Tested.
Maximum Junction Temperature Range(150℃) General.

📥 Download Datasheet

WFF630 silicon n-channel mosfet by Winsemi - Datasheet Preview

Datasheet Details

Part number	WFF630
Manufacturer	Winsemi
File Size	687.91 KB
Description	Silicon N-Channel MOSFET
Datasheet	WFF630 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
WFF634	N-Channel MOSFET	Wisdom technologies
WFF640	N-Channel MOSFET	Wisdom technologies
WFF6N90	N-Channel MOSFET	Wisdom technologies
WFF	Fast Fusible Metal Film Resistors	Welwyn Components Limited
WFF10N60	N-Channel MOSFET	Wisdom technologies

Other Datasheets by Winsemi

Part Number	Description
WFF10N65L	Silicon N-Channel MOSFET
WFF12N65L	Silicon N-Channel MOSFET
WFF12N65LCA	Silicon N-Channel MOSFET
WFF12N65S	Power MOSFET
WFF12N70S	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

WFF630 Silicon N-Channel MOSFET Features ■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 22nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.