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WFF9N90 - Silicon N-Channel MOSFET

Description

Silicon N-Channel MOSFET

Features

  • 9A,900V,RDS(on)(Max1.35Ω)@VGS=10V.
  • Ultra-low Gate charge(Typical 43nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet preview – WFF9N90

Datasheet Details

Part number WFF9N90
Manufacturer Winsemi
File Size 281.86 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFF9N90 Datasheet
Additional preview pages of the WFF9N90 datasheet.

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Full PDF Text Transcription

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WFF9N90 Product Description Silicon N-Channel MOSFET Features � 9A,900V,RDS(on)(Max1.35Ω)@VGS=10V � Ultra-low Gate charge(Typical 43nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
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